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6.1 GaN: From Watts to Kilowatts

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Date: March 11, 2019
TI's integrated approach to GaN offers ease of design with a compact single chip solution, high efficiency due to optimized gate drive layout, and high reliability with integrated over-current protection and 20 Million hours of device reliability hours. With devices from 150mΩ to 50mΩ, TI has a GaN solution for every application. 
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