C2000™ MCUs - Digital power

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1.5 Deep dive on SiC based 10kW grid tied inverter design

説明

2018年 5月 15日
Increasing demand for renewable energy sources pushing the requirements of higher efficiency and power density which can be achieved at high voltage DC inputs from PV panel. Silicon Carbide (SiC) devices gain advantage over Si IGBT at high voltage due to lower conduction and switching losses. Since PV inverters are typically cooled by natural convection power density is greatly impacted by system losses.With SiC, inverter switching frequency can be 1.5x to 2x times of conventional IGBT switching frequency. Switching high voltage at high switching frequency involves challenges in terms of isolation and regulatory compliance. This session is about design considerations and challenges involved in designing a high power (10kW and higher) SiC based grid-tie inverter.

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