A robust gate driver solution for high power density EV on-board chargers using silicon carbide
2018년 6월 6일
This presentation discussed the unique intrinsic material properties of silicon carbide (SiC) and how they influence power systems and explained why SiC MOSFET has lower Rdson than Si MOSFET, as well as what are the advantages for SiC MOSFET compared with Si IGBT. An application example SiC MOSFET based 6.6kW Totem-pole PFC for EV on-board charger (TIDA-01604) using UCC21520-Q1 drivers has been presented. Then the gate driver requirements for SiC MOSFET have been discussed in detail and a design example (TIDA-01605) using UCC21521 is given.