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Let TI GaN revolutionize your next design

with Masoud Beheshti and Alberto Doronzo

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Date: February 15, 2017

The advent of wide-bandgap devices such as gallium nitride (GaN) is enabling a new generation of power-conversion designs not previously possible with silicon metal-oxide semiconductor field-effect transistors (MOSFETs). These designs enable systems to reach new levels of power density and efficiency. Watch this video to learn about the 4 ways TI GaN can revolutionize your next design.