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Power density and reliability with TI-GaN

Description

September 19, 2019

GaN devices are enabling solutions with twice the power density of what is possible with best-in-class superjunction FETs. TI GaN solutions are in mass production and in many systems on the market today. These systems are not only smaller and more efficient, but are also in system cost parity with their silicon predecessors. Lets find out how!

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