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Robust Gate Driver Solution for High-Power-Density xEV Chargers using Silicon Carbide (SiC) MOSFETs

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Date: September 18, 2018

xEV Chargers can achieve high efficiency and high power density by using SiC MOSFET.  This presentation will cover below specific in-depth technical topics:

1) SiC MOSFET characteristics and its advantages: why use it for xEV chargers;

2) Overview of xEV charger circuit topologies: where SiC MOSFET is used;

3) Key gate driver requirements for the SiC MOSFET

4) Introduction of TIDA-01604 Design of a 98.6% Efficiency, 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger and TIDA-01605, an Automotive  Dual Channel SiC MOSFET Gate Driver Reference Design with Two Level Turn-off Protection.

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