電子郵件

6.6-kW OBC with GaN and C2000™ real-time MCUs demo

描述

2021年 6月 17日

Our industry first automotive GaN FET with integrated gate driver, protection, reporting and active power management, LMG3522R030-Q1, features a top cooled surface mount package to simplify production and heat dissipation. The C2000 MCU ensures smooth monotonic start-up of power factor correction (PFC) output.

Together, the GaN FET and C2000 MCU can enable an industry-highest 500kHz resonant frequency and 59% smaller magnetics in a 6.6-kW on-board charger.

其他資訊

arrow-topclosedeletedownloadmenusearchsortingArrowszoom-inzoom-out arrow-downarrow-uparrowCircle-leftarrowCircle-rightblockDiagramcalculatorcalendarchatBubble-doublechatBubble-personchatBubble-singlecheckmark-circlechevron-downchevron-leftchevron-rightchevron-upchipclipboardclose-circlecrossReferencedashdocument-genericdocument-pdfAcrobatdocument-webevaluationModuleglobehistoryClockinfo-circlelistlockmailmyTIonlineDataSheetpersonphonequestion-circlereferenceDesignshoppingCartstartoolsvideoswarningwiki