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GaN: Enabling the highest power density in EV/HEV on-board charging

描述

2020年 11月 5日

Our new fully integrated automotive GaN FETs reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions – enabling engineers to achieve extended battery range, increased system reliability and lower design cost. The new LMG3522R030-Q1 and LMG3525R030-Q1 offer 62% faster switching speeds in the DC/DC power-conversion stage and a 59% reduction in the size of power magnetics. The integration of the FET and the gate driver enables a switching speed of greater than 150 V/ns – lowering losses by 66% over discrete GaN FETs. With more than 40 million device-reliability hours, over 5 GWh of in-application testing, and less than 1 FIT rate for 10-year lifetime, our GaN offers the ruggedness expected by the automotive industry.

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