High Voltage Seminar

電子郵件

4.24 GaN: the path to high power density

描述

2017年 10月 9日

In this presentation, we will introduce the first fully-integrated Gallium Nitride or GaN-based Power Stages, LMG3410 and its advantages compared to discrete GaN devices. We will help you to understand how we can achieve higher power density by using GaN devices. We will also step through the design process and trade-offs we made for totem pole CCM PFC and 1MHz LLC with GaN.

PDFs for download

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