GaN: From Watts to Kilowatts
描述
2019年 3月 11日
TI's integrated approach to GaN offers ease of design with a compact single chip solution, high efficiency due to optimized gate drive layout, and high reliability with integrated over-current protection and 20 Million hours of device reliability hours. With devices from 150mΩ to 50mΩ, TI has a GaN solution for every application.
