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Robust Gate Driver Solution for High-Power-Density xEV Chargers using Silicon Carbide (SiC) MOSFETs

描述

2018年 9月 18日

xEV Chargers can achieve high efficiency and high power density by using SiC MOSFET.  This presentation will cover below specific in-depth technical topics:

1) SiC MOSFET characteristics and its advantages: why use it for xEV chargers;

2) Overview of xEV charger circuit topologies: where SiC MOSFET is used;

3) Key gate driver requirements for the SiC MOSFET

4) Introduction of TIDA-01604 Design of a 98.6% Efficiency, 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger and TIDA-01605, an Automotive  Dual Channel SiC MOSFET Gate Driver Reference Design with Two Level Turn-off Protection.

PDFs for download

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